wpt2n41 single, pnp, -30v, -3a, power transistor descriptions the wpt2n41 is pnp bipolar power transistor with very low saturation voltage. this device is suitable for use in charging circuit and other power management. standard product wpt2n41 is pb-free. features ? ultra low collector-to-e mitter saturation voltage ? high dc current gain >100 ? 3a continue collector current ? small package pdfn3x2-8l. applications ? charging circuit ? power regulator ? other power management in portable equipments pdfn3x2-8l pin configuration (top view) 2n41 = device code yy = year ww = week marking order information device package shipping wpt2n41-8/tr pdfn3x2-8l 3000/reel&tape 1 2 3 4 8 7 6 5 1 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute maximum ratings a surface mounted on fr-4 board using 1 square inch pad size, 1oz copper b surface mounted on fr-4 board usi ng minimum pad size, 1oz copper c pulse width=300s, duty cycle<2% electronics characteristics (ta=25 o c, unless otherwise noted) parameter symbol value unit collector-emitter voltage v ceo -32 v collector-base voltage v cbo -45 v emitter-base voltage v ebo -6 v continues collector current a i c -3 a continues collector current b -2 a pulse collector current c i cm -6 a power dissipation a p d 3.0 w power dissipation b 1.2 w junction temperature t j 150 c lead temperature t l 260 c storage temperature range t stg -55~155 c parameter symbol test conditions min. typ. max. unit collector-emitter breakdown voltage bv ceo i c =-10ma, i b =0ma -32 v collector-base breakdown voltage bv cbo i c =-1ma, i e =0ma -45 v emitter-base breakdown voltage bv ebo i e =-100ua, i c =0ma -6 v collector cutoff current i cbo v cb =-40v -100 na emitter cutoff current i ebo v eb =-5v -100 na collector-emitter sa turation voltage c v ce(sat) i c =-2a, i b =-200ma -0.2 -0.5 v base-emitter satu ration voltage c v be(sat) i c =-2a, i b =-200ma -1.0 -1.5 v dc current gain c h fe i c =-1a , v ce =-2v 100 200 320 wpt2n41 2 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (ta=25 o c, unless otherwise noted) output characteristics dc current gain power derating transfer characteristics c-e saturation voltage vs. collector current safe operating area transient thermal response (junction-to-ambient) 0 25 50 75 100 125 150 0 20 40 60 80 100 % of rated power or i pp ambient temperature( o c) 0.00.51.01.52.02.53.03.54.04.55.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -5ma -10ma -20ma -30ma -40ma -50ma i c -collector current (a) v ce -collector to emitter voltage(v) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1e-3 0.01 0.1 1 10 v ce =-2v ta=-45 o c ta=25 o c i c -collector current (a) v be -base to emitter voltage(v) ta=85 o c 1e-3 0.01 0.1 1 10 5 50 500 5000 ta=-45 o c ta=25 o c ta=85 o c h fe -dc current gain i c -collector current(a) 1e-3 0.01 0.1 1 10 1 10 100 1000 ta=25 o c ta=-45 o c v ce(sat) -collector saturation voltage(v) i c -collector current(a) ta=85 o c ta=85 o c 10 0.01 0.1 1.0 10 100 0.1 1.0 100 s 1ms 10ms 100ms 1 s dc single pulse t a = 25 c collector to emitter voltage: v ce (v) collector current: i c (a) 10 -4 10 -3 10 -2 10 -1 600 100 10 1 square wave pulse duration (s) normalized transient thermal impedance z 2 1 0.1 0.01 0.2 0.1 0.05 0.02 duty = 0.5 1. duty cycle, d = 2. r thja = 42c/w 3. t jm - t a = p cm x z thja t 1 t 2 t 1 t 2 p cm thja x rthja wpt2n41 3 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package outline dimensions pdfn3x2-8l symbol dimensions in millimeters min. typ. max. a 0.70 0.80 0.90 b 0.24 0.30 0.35 c 0.08 0.15 0.20 d 2.90 3.00 3.05 d1 1.52 1.62 1.72 e 1.90 2.00 2.10 e1 1.60 1.70 1.75 e2 1.07 1.17 1.27 e 0.65 bsc l 0.20 0.30 0.40 l1 0.00 0.10 l2 0.184max 4 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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